发明名称 |
Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same |
摘要 |
The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. |
申请公布号 |
US2011133177(A1) |
申请公布日期 |
2011.06.09 |
申请号 |
US20100956624 |
申请日期 |
2010.11.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SUZAWA HIDEOMI;KURATA MOTOMU;MIKAMI MAYUMI |
分类号 |
H01L29/786;H01L21/336;H01L21/44 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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