发明名称 |
SEMICONDUCTOR DEVICE WITH IMPROVED ON-RESISTANCE |
摘要 |
A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone. |
申请公布号 |
US2011133272(A1) |
申请公布日期 |
2011.06.09 |
申请号 |
US20090633956 |
申请日期 |
2009.12.09 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
MAUDER ANTON;BERGER RUDOLF;HIRLER FRANZ;SIEMIENIEC RALF;SCHULZE HANS-JOACHIM |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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