| 摘要 |
<p>Disclosed is an etching gas that contains CHF2COF. The etching gas may contain, as an additive, at least one gas selected from among O2, O3, CO, CO2, F2, NF3, Cl2, Br2, I2, XFn (wherein X is Cl, I or Br; and n is an integer satisfying the relationship: 1 = n = 7), CH4, CH3F, CH2F2, CHF3, N2, He, Ar, Ne, Kr, and so on, from among CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HI, HBr, HCl, CO, NO, NH3, H2, and so on, or from among CH4, CH3F, CH2F2 and CHF3. The etching gas exhibits excellent etching performances such as etching selectivity (etching rate ratio of a substrate to a resist) and etching profile, is easily available, and generates substantially no CF4 (which is causative of an environmental load) as a by-product.</p> |
