| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a heating electrode of a variable-resistance memory device having a phase-variable matter film and a variable-resistance memory utilizing it. SOLUTION: The method for manufacturing the variable-resistance memory device includes steps to form the heating electrode, to form a variable-resistance matter film on the heating electrode, and to form an upper electrode on the variable resistance matter film. The heating electrode contains a metal nitride which is bigger than titanium in a radius of an atom and formed of a chemical vapor deposit ( thermal CVD ) without using plasma. COPYRIGHT: (C)2011,JPO&INPIT
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