Verfahren zur Herstellung eines Musters aus Vertiefungen in der Oberflaeche eines festen Koerpers

摘要

A pattern of depressions or holes, defined by a pattern mask, is cut into a surface by means of a beam of ions with energies in the 1,000 to 75,000 electron volt range. Patterns including elements 1 micron wide have been reliably produced in thin films on metallic insulating and semiconducting substrates using photolithographic masking techniques.