发明名称 |
PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.
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申请公布号 |
US2011133187(A1) |
申请公布日期 |
2011.06.09 |
申请号 |
US20100765705 |
申请日期 |
2010.04.22 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM SANG HOON;KIM GYUNGOCK;KIM IN GYOO;SUH DONGWOO;JOO JIHO;JANG KI SEOK |
分类号 |
H01L31/0256;H01L31/0232;H01L31/18 |
主分类号 |
H01L31/0256 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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