| 摘要 |
An integrated circuit part containing at least one MOS transistor with a trace system, with a source region having a source contact, and with a drain region having a drain contact, and with a gate region having a gate contact, and with a first cover layer lying on the gate, source, and drain regions and a first trace level formed thereupon, and with a second cover layer, lying above the first trace level, with a second trace level lying thereupon, and with a trace formed and connected with the source contact, and with a trace formed and connected with the drain contact, whereby a first metal region, arranged at least partially between the trace, connected to the source contact, and the trace, connected to the drain contact, is provided above the gate region lying on the first cover layer and/or the second cover layer, and the metal region is connected neither to the drain contact nor to the source contact or to the gate contact. |
