发明名称 |
Verfahren zum Ziehen von Gruppe-III-Nitrid-Halbleiterkristall |
摘要 |
<p>A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber (101) including a heat-shielding portion (110) for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion (110) in chamber (101). Then, by heating material (13) to be sublimated, a material gas is deposited on the other side of heat-shielding portion (110) in chamber (101) so that a Group III nitride semiconductor crystal (15) is grown.</p> |
申请公布号 |
DE602008006507(D1) |
申请公布日期 |
2011.06.09 |
申请号 |
DE20086006507T |
申请日期 |
2008.12.10 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES LTD. |
发明人 |
MIYANAGA, MICHIMASA;MIZUHARA, NAHO;TANIZAKI, KEISUKE;SATOH, ISSEI;TAKEUCHI, HISAO;NAKAHATA, HIDEAKI |
分类号 |
C30B23/00;C30B29/40 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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