| 摘要 |
<p>Disclosed is a semiconductor light emitting element (1) which includes: a plurality of n-side columnar conductor sections (183), each of which is provided by penetrating a p-type semiconductor layer (160) and a light emitting layer (150), and is electrically connected to an n-type semiconductor layer (140); an n-side layer-like conductor section (184), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the surface of the light emitting layer (150) when viewed from the light emitting layer (150), and which is electrically connected to the n-side columnar conductor sections (183); a plurality of p-side columnar conductor sections (173), each of which is electrically connected to the p-type semiconductor layer (160); and a p-side layer-like conductor section (174), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the light emitting layer (150) when viewed from the light emitting layer (150), and which is electrically connected to the p-side columnar conductor sections (173). Thus, nonuniformity of the quantity of light outputted from the light emitting layer of the semiconductor light emitting element is suppressed, and reduction of the area of the light emitting layer in the semiconductor light emitting element is suppressed.</p> |
