摘要 |
<p>PURPOSE: An organic pyroelectric sensor integrated in a thin film transistor and manufacturing method thereof are provided to use a P(VDF-TrFE) of an OTFT in a functional gate dielectric layer, thereby obtaining superior linearity and reliability. CONSTITUTION: An Ni gate electrode is deposited on a film by electroplating. A P(VDF-TrFE) layer is applied on an Ni gate electrode to form a dielectric layer. The dielectric layer is annealed, melted, and crystallized to increase crystallinity. A semiconductor layer, and source and drain electrode layers are deposited on the dielectric layer.</p> |