发明名称 ORGANIC PYROELECTRIC SENSORS INTEGRATED IN THIN-FILM TRANSISTORS AND THE METHOD FOR PRODUCING THE SAME
摘要 <p>PURPOSE: An organic pyroelectric sensor integrated in a thin film transistor and manufacturing method thereof are provided to use a P(VDF-TrFE) of an OTFT in a functional gate dielectric layer, thereby obtaining superior linearity and reliability. CONSTITUTION: An Ni gate electrode is deposited on a film by electroplating. A P(VDF-TrFE) layer is applied on an Ni gate electrode to form a dielectric layer. The dielectric layer is annealed, melted, and crystallized to increase crystallinity. A semiconductor layer, and source and drain electrode layers are deposited on the dielectric layer.</p>
申请公布号 KR20110061519(A) 申请公布日期 2011.06.09
申请号 KR20110035172 申请日期 2011.04.15
申请人 SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 LEE, NAE EUNG;NGUYEN THANH TIEN
分类号 H01L29/786;B82Y30/00 主分类号 H01L29/786
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