| 摘要 |
<p>PURPOSE: A method for making a double junction semiconductor is provided to form a lot of transistors in a unit volume, thereby increasing semiconductor performance. CONSTITUTION: A mask is placed on a wafer substrate on which photo resist is applied. A mask is eliminated by light. Photo resist is eliminated from a part where the mask is not placed and impurities are added to the part. The same process is repeated on the back side of the substrate. Photo resist is applied on the frontal side of the substrate.</p> |
