| 发明名称 |
LAMINATED ELECTRODE FOR A SEMICONDUCTOR DEVICE |
| 摘要 |
In the process of forming electrodes for semiconductor devices wherein a platinum layer is to be photo mask etched, the process is improved by replacing the platinum layer with a layer of platinum-nickel alloy containing 1 to 20 atomic percent nickel.
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| 申请公布号 |
US3658489(A) |
申请公布日期 |
1972.04.25 |
| 申请号 |
USD3658489 |
申请日期 |
1969.07.30 |
| 申请人 |
NIPPON ELECTRIC CO. LTD. |
发明人 |
MASAOKI ISHIKAWA;DAIZABURO SHINODA |
| 分类号 |
H01L21/00;H01L23/485;(IPC1-7):B32B15/04;H01L1/14 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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