| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a slurry capable of reducing scratches on the surface of a wafer after CMP polishing, and a method for preparing the polishing slurry. SOLUTION: The method for preparing the slurry includes a process of adding abrasive grains into an aqueous medium at 23 deg.C or lower for dispersing them. The method also may include a process for storing the dispersed slurry in a cooling tank.</p> |
