| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method capable of generating an almost uniform magnetic flux distribution pattern under the entire rf electrode surface and implementing uniform wafer processing rate, and a manufacturing method of a semiconductor device. <P>SOLUTION: The plasma processing method is a plasma processing method for generating capacitive coupled plasma in a space near the surface of wafer 23 mounted on a lower electrode 2 and processing the wafer. A plurality of magnets 6 for making a point cusp magnetic field arranged on the exterior side of an upper electrode 1 facing the lower electrode or the inside is arranged extendedly in the same magnet arrangement in a direction extending in the peripheral region. A point cusp magnetic field 7 using a uniform magnetic flux distribution pattern is made near the inner side surface of the upper electrode. The wafer is processed by generating content connection type plasma based on the point cusp magnetic field 7. <P>COPYRIGHT: (C)2007,JPO&INPIT |
