发明名称 |
Transistor, method of manufacturing the transistor and electronic device including the transistor |
摘要 |
Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor. |
申请公布号 |
EP2330629(A1) |
申请公布日期 |
2011.06.08 |
申请号 |
EP20100193027 |
申请日期 |
2010.11.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, JI-SIM;LEE, CHANG-SEUNG;LE, JAE-CHEOL;LEE, SANG-YOON;KWON, JANG-YEON;LEE, KWANG-HEE;SON, KYOUNG-SEOK |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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