发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING DOUBLE WALL OXIDATION |
摘要 |
PURPOSE: A method for manufacturing a semiconductor device using dual sidewall oxidation is provided to prevent silicon from being lost on a trench sidewall by using a low pressure chemical vapor deposition method and a slot plane antenna oxidation process using plasma. CONSTITUTION: A trench(24A) is formed by etching a semiconductor substrate(21) using a pad nitride layer(23A) as an etch barrier. A first sidewall oxide layer(25) is formed by oxidizing the trench and the pad nitride layer through oxidation process using plasma. A first sidewall oxide layer is formed by a slot plane antenna oxidation process. A second sidewall oxide layer(26) is formed on the first sidewall oxide layer. The second sidewall oxide layer is formed by using a low pressure chemical vapor deposition method.
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申请公布号 |
KR20110060728(A) |
申请公布日期 |
2011.06.08 |
申请号 |
KR20090117407 |
申请日期 |
2009.11.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JEON, BONG SEOK;JEON, SEUNG JOON;AHN, SANG TAE;BIN, JIN HO |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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