发明名称 |
TFT HAVING OXIDE SEMICONDUCTOR LAYER AS OHMIC CONTACT LAYER AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor including an oxide semiconductor layer as an ohmic contact layer and a manufacturing method thereof are provided to prevent a lifting phenomenon between films by forming the ohmic contact layer with a physical deposition method instead of a CVD method. CONSTITUTION: A gate electrode(130) is formed on a substrate(110). A gate insulation layer(140) is formed on the gate electrode. An active layer(150) is formed on the gate insulation layer. A source electrode(170) and a drain electrode(175) are formed on the gate insulation layer and the active layer. An ohmic contact layer(160) is arranged between the active layer and the source and drain electrodes.</p> |
申请公布号 |
KR20110060479(A) |
申请公布日期 |
2011.06.08 |
申请号 |
KR20090117076 |
申请日期 |
2009.11.30 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
YOU, CHUN GI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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