| 摘要 |
PURPOSE:To attain low power consumption by providing a GaAs diode and a discharge circuit between the 1st GaAs FET and an input terminal in addition to the 1st GaAs FET of normally open type being a driver and the 2nd GaAs FET of normally close type being a load. CONSTITUTION:The GaAs FET51 of normally open type becomes a driver to an inverter circuit and the GaAs FET52 of normally close type constitutes a load. Further, a GaAs diode 53 is connected between a gate of the FET51 and a signal input terminal in the polarity with forward bias when an input signal VIN is at a high level. Further, when the input signal VIN connected between the gate of the GaAs FET51 and the signal input terminal is at a low level, the stored charge of the gate of the GaAs FET51 is discharged by the GaAs diode for discharge. |
