| 摘要 |
The present invention relates to a method comprising a) providing a stack of a first substrate (1) and a InGaN seed layer (3) formed on the first substrate; b) growing an InGaN layer (4) on the InGaN seed layer (3) to obtain an InGaN-on-substrate structure; c) forming a first mirror layer (6) overlaying a surface of the InGaN layer (4); d) detaching the first substrate (1); and e) forming a second mirror layer (7) overlaying an opposing surface of the InGaN (4).
|
