| 摘要 |
A semiconductor diode having multiple Voltage characteristics and its method of fabrication is disclosed. When a voltage is applied in the forward direction to the diode, at some threshold, the current switches to a higher value of current. A decrease of the voltage causes a decrease in the current and, after a reverse voltage applied, reverse current values of increasing magnitude are obtained until a threshold is reached. When the threshold is reached, the diode switches from a high value of reverse current to a lower value of reverse current. A decrease in the reverse voltage to zero, reduces the current to zero and, increasing the voltage in the forward direction starts the above-described cycle over again. By adjusting the forward and reverse voltages, switching may occur at values higher than the thresholds and a family of voltage-current characteristics is obtained. A typical device consists of n-conductivity type gallium arsenide into which a region of deep centers has been diffused. A typical deep center of oxygen. A semiconductor junction which is alloyed, diffused or of the Schottky barrier type is formed with the deep center region. Where the junction formed is of the alloyed type, for example, an indium-zinc alloy may be used. Finally, an ohmic contact of gold-tin is applied to the semiconductor body. Forward voltages in the neighborhood of 1 volt provide switching in the forward direction while reverse voltages of as little as 3 volts cause switching in the reverse direction. A diode fabrication technique is also disclosed.
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