发明名称 METHOD OF MANUFACTURING BONDED SUBSTRATE, BONDED SUBSTRATE, METHOD OF MANUFACTURING SOLID-STATE IMAGING APPARATUS, SOLID-STATE IMAGING APPARATUS, AND CAMERA
摘要 PURPOSE: A method for manufacturing a bonded substrate, the bonded substrate, a method for manufacturing a solid imaging device, the solid imaging device, and a camera are provided to obtain high bonding strength at a low temperature by forming a first bonding layer or second bonding layer using silicon carbide or nitrification silicon carbide. CONSTITUTION: A first bonding layer(11) is formed on one surface of a semiconductor substrate(10). A second bonding layer(21) is formed on one side of a support substrate(20). The first bonding layer is attached to the second bonding layer by a thermal process. One side of the first bonding layer or second bonding layer has a silicon carbide or nitrification silicon carbide.
申请公布号 KR20110060796(A) 申请公布日期 2011.06.08
申请号 KR20100108025 申请日期 2010.11.02
申请人 SONY CORPORATION 发明人 FUJII NOBUTOSHI
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
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