摘要 |
PURPOSE: A method for manufacturing a bonded substrate, the bonded substrate, a method for manufacturing a solid imaging device, the solid imaging device, and a camera are provided to obtain high bonding strength at a low temperature by forming a first bonding layer or second bonding layer using silicon carbide or nitrification silicon carbide. CONSTITUTION: A first bonding layer(11) is formed on one surface of a semiconductor substrate(10). A second bonding layer(21) is formed on one side of a support substrate(20). The first bonding layer is attached to the second bonding layer by a thermal process. One side of the first bonding layer or second bonding layer has a silicon carbide or nitrification silicon carbide. |