| 摘要 |
PURPOSE: A method for manufacturing a sidewall contact of a semiconductor device using a self-aligned damascene process is provided to uniformly form the position and depth of a sidewall contact by forming a recess with uniform depth. CONSTITUTION: A plurality of active regions(201) including a first sidewall(S1) and a second sidewall(S2) are formed by etching a semiconductor substrate(21A). An insulation layer(26) is formed on the first sidewall and the second sidewall. An etch stop layer(28A) partially fills a space between the active regions. A recess is formed to expose the insulation layer formed on the first sidewall or second sidewall. The sidewall contact is formed to expose a part of the sidewall by selectively removing the insulation layer.
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