METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SILICIDE LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device including a silicide layer is provided to remove an adhesion layer for preventing a crack by forming a titanium nitride layer under a nitrogen containing atmosphere. CONSTITUTION: An interlayer insulation layer(22) is formed on a substrate(21). A contact hole(23) is formed by exposing the substrate by etching the interlayer insulation layer. A titanium layer is formed on the surface with the contact hole. A titanium silicide layer(25) is formed on the interface of the titanium layer and the substrate. A metal layer is formed on the nitrified titanium layer to fill the contact hole.