发明名称 SEMICONDUCTOR DEVICE WITH BURIED BITLIN METHOD FOR MANUFACTURING THE SAMEE
摘要 PURPOSE: A semiconductor device including a buried bit line and a manufacturing method thereof are provided to uniformly form the depth and position of a junction area by using a photosensitive film when a junction area is formed. CONSTITUTION: A first conductive film is formed on a substrate(21). A plurality of buried bit lines are formed by etching a first conductive layer. A first active area(27) is formed between the buried bit lines. A junction area(31) connected to the buried bit line is formed on the first active area. A second active area(32A) separated by a trench is formed on the first active area.
申请公布号 KR20110060864(A) 申请公布日期 2011.06.08
申请号 KR20100120894 申请日期 2010.11.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 MA, WON KWANG;LIM, CHANG MOON;KIM, HYEONG SOO
分类号 H01L21/8242;H01L21/28;H01L27/108 主分类号 H01L21/8242
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