发明名称 |
SEMICONDUCTOR DEVICE WITH BURIED BITLIN METHOD FOR MANUFACTURING THE SAMEE |
摘要 |
PURPOSE: A semiconductor device including a buried bit line and a manufacturing method thereof are provided to uniformly form the depth and position of a junction area by using a photosensitive film when a junction area is formed. CONSTITUTION: A first conductive film is formed on a substrate(21). A plurality of buried bit lines are formed by etching a first conductive layer. A first active area(27) is formed between the buried bit lines. A junction area(31) connected to the buried bit line is formed on the first active area. A second active area(32A) separated by a trench is formed on the first active area.
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申请公布号 |
KR20110060864(A) |
申请公布日期 |
2011.06.08 |
申请号 |
KR20100120894 |
申请日期 |
2010.11.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
MA, WON KWANG;LIM, CHANG MOON;KIM, HYEONG SOO |
分类号 |
H01L21/8242;H01L21/28;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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