| 摘要 |
Disclosed herein are top anti-reflective coating polymers used in a photolithography process, methods for preparing the anti-reflective coating polymer, and anti-reflective coating compositions comprising the disclosed anti-reflective coating polymers. The top anti-reflective coating polymers are used in immersion lithography for the fabrication of a sub-50 nm semiconductor device. The top anti-reflective coating polymer is represented by Formula 1 below: wherein R1, R2 and R3 are independently hydrogen or a methyl group; and a, b and c represent the mole fraction of each monomer, and are independently in the range between about 0.05 and about 0.9. Because the disclosed top anti-reflective coatings are not soluble in water, they can be used in immersion lithography using water as a medium for the light source. In addition, since the top anti-reflective coatings can reduce the reflectance from an underlayer, the uniformity of CD is improved, thus enabling the formation of ultrafine patterns. |
