发明名称 3D INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A three dimensional interconnection structure and a manufacturing method thereof are provided to minimize optical or electric leakage by arranging a transceiver on both sides of a platform. CONSTITUTION: A three dimensional interconnection structure includes a wafer, a first electrode(102), and a second electrode(107). One side of the wafer has a reverse V shape. A U groove for mounting a circuit is formed on the bottom of the wafer. A first electrode is formed on the reverse V shaped side and the U groove of the wafer. A second electrode is formed on the reverse V shaped side and upper side of the wafer.
申请公布号 KR20110060252(A) 申请公布日期 2011.06.08
申请号 KR20090116785 申请日期 2009.11.30
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 LIM, KWON SEOB
分类号 H01L23/52 主分类号 H01L23/52
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