METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to form many patterns by forming a photoresist pattern through the increase of exposure energy in a photolithography process. CONSTITUTION: A first hard mask film(22A) and a second hard mask film are successively formed on a target layer(21A). A sacrificial layer is formed on the second hard mask film. A sacrificial film pattern is formed by etching the sacrificial layer using the photoresist pattern as an etching barrier. A first hard mask pattern is formed by etching the first hard mask layer. A pattern(30) is formed by etching the target layer using the first hard mask pattern as the etch barrier.