| 摘要 |
PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to improve the reliability of a metal wiring by preventing SOG out-gassing through tungsten deposited on the side of a via hole. CONSTITUTION: A lower wire(16) including a tangent layer is formed on a semiconductor substrate(11). An interlayer dielectric layer(17) with an SOG film is formed on the upper side of the semiconductor substrate including the lower wire. A via hole(19) is formed in the interlayer dielectric layer. A tangent sidewall(20) is formed by depositing the tungsten layer on the side of the via hole. The barrier metal layer is formed along the surface of the via hole.
|
