CRYSTALLIZATION METHOD OF AMORPHOUS SI THIN FILMS

摘要

PURPOSE: A method for laser crystallizing an amorphous silicon thin film is provided to form a polycrystalline silicon thin film by radiating 532nM Nd:YAG laser to the amorphous silicon thin film formed on a glass board. CONSTITUTION: A plurality of mirrors(121, 122) reflects laser beam from laser source(110) to a desired direction. 532nM Nd:YAG laser is used as the laser source. An beam expander(130) expands laser beam from the mirrors. A equalizer(140) equalizes the laser beam from the beam expander. A focusing lens(150) is focused to the laser beam from the equalizer.