发明名称 |
METHODS OF FORMING ELECTRONIC DEVICES |
摘要 |
PURPOSE: A method for forming an electronic device is provided to be used for a contraction process and a dual patterning process by precisely controlling the critical dimension of a lithography pattern. CONSTITUTION: A semiconductor substrate(100) including one or more layers to be patterned(102) is prepared. A first photo-resist layer(106) is applied on the layers to be patterned. The first photo-resist layer is exposed to an active radiation ray through a patterning photo-mask(110). The exposed first photo-resist layer is developed to form a resist pattern(106'). A second photo-resist layer is applied on the layers to be patterned. The second photo-resist layer is exposed to the active radiation ray. The exposed second photo-resist layer is developed, and a part of the second photo-resist layer is remained. |
申请公布号 |
KR20110002797(A) |
申请公布日期 |
2011.01.10 |
申请号 |
KR20100061494 |
申请日期 |
2010.06.28 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. |
发明人 |
BAE, YOUNG CHEOL;CARDOLACCIA THOMAS;LIU YI |
分类号 |
H01L21/027;G03F7/004;G03F7/26 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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