METHOD OF MAMUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the penetration of impurities in an interlayer insulating film deposition process by forming a fine film using radical. CONSTITUTION: A source gas and a reaction gas are supplied. The reaction gas is excited to a plasma state in order to generate the radical of the reaction gas. A liner(30) is formed on a substrate(10) using the source gas and the radical of the reaction gas. An interlayer insulating film(40) is formed on the liner using the source gas and an impurity gas. The liner and the interlayer insulating film are formed in an identical reaction chamber using an in-situ method.