SELF-ALIGNED SPACER MULTIPLE PATTERNING METHODS

摘要

PURPOSE: A method for multi-patterning a self-aligned spacer is provided to form a high density resist pattern by applying a photo-resist layer containing a resin component and a photoactive component to a photo-resist pattern and exposing the photo-resist layer to active radiation ray. CONSTITUTION: A semiconductor substrate(100) including one or more layers to be patterned(102). A first photo-resist layer(106) containing a first resin component and a first photoactive component are applied on the layers to be patterned. The first photo-resist layer is exposed to active radiation ray(108) through a photo mask(110). The first photo-resist layer is developed to form a resist pattern. The resist pattern is thermally treated in a hard baking process.