发明名称 |
Trench process and structure for backside contact solar cells with polysilicon doped regions |
摘要 |
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
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申请公布号 |
US7851698(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20090392923 |
申请日期 |
2009.02.25 |
申请人 |
SUNPOWER CORPORATION |
发明人 |
DE CEUSTER DENIS;COUSINS PETER JOHN;SMITH DAVID D. |
分类号 |
H01L31/00;H01L21/00;H01L31/072 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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