| 摘要 |
Systems and methods for inspection of lithographic reticles are provided. The method begins with the generation of a topographical map for a reticle surface with the reticle being in a load-free state. The reticle is then loaded onto a reticle chuck in a lithographic apparatus. A topographical map is then generated for the loaded reticle. The topographical maps for the reticle in a load-free and loaded state are then compared to generate differences. Based on these differences a control action is taken, which can include approving use of the reticle, rejecting the reticle use or applying forces to the reticle to compensate for the topography differences. In an embodiment, the method occurs in situ in that at least the generation of the loaded-state topography occurs within a lithographic apparatus during a wafer run (or other type of run). A lithographic reticle inspection system and a reticle inspection analyzer are also disclosed.
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