Vertical cavity surface emitting laser

摘要

A VCSEL includes a GaAs substrate; a first semiconductor distributed Bragg reflector (DBR) disposed on the GaAs substrate and including a first part and a second part on the first part; a semiconductor mesa disposed on the first semiconductor DBR and including an active layer; and a second DBR on the semiconductor mesa. The first part is composed of an undoped semiconductor material. The second part includes third III-V compound semiconductor layers composed of a material containing indium and gallium as the group III element and phosphorus as the group V element and fourth III-V compound semiconductor layers composed of a material containing gallium as the group III element and arsenic as the group V element. The third III-V compound semiconductor layers and the fourth III-V compound semiconductor layers are doped with an n-type impurity.