| 摘要 |
A semiconductor memory device includes memory cells, word lines connected to the memory cells, word driver circuits for driving the word lines, a decoder circuit group including a plurality of decoder circuits outputting a decoder signal for selecting at least one of the word driver circuits, decoder lines connecting the decoder circuits to the word driver circuits, and an equalizing circuit for electrically disconnecting the decoder lines from the decoder circuits and equalizing the voltages of the decoder lines connected to the decoder circuits belonging to the decoder circuit group.
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