发明名称 |
Solid-state imaging device and method of manufacturing the same |
摘要 |
A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion.
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申请公布号 |
US7851838(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20070941583 |
申请日期 |
2007.11.16 |
申请人 |
SONY CORPORATION |
发明人 |
YOSHIHARA IKUO |
分类号 |
H01L27/146;H01L31/09;H01L31/062;H04N5/335;H04N5/361;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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