| 摘要 |
This invention relates a method to use a bipolar transistor as temperature sensor and/or self-calibrated thermometer which is immune to errors generated by parasitic elements as resistances and ideality factors and their evolution. In this invention the product of the collector current values ICmi(VEBmi) as a function of the emitter-base forward bias voltage VEBim; ICi(VEBi)×exp(−qVEBi/kT0) is plotted as a function of the emitter-base forward bias voltage VEBim. T0 is a parameter which ensures that a region of the above mentioned plot results with a slope equal to zero, while simultaneously represents the transistor absolute temperature at the moment at which the collector current ICmi is obtained as a function of the forward bias VEBmi.
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