发明名称 Semiconductor laser and manufacturing method thereof
摘要 In a semiconductor laser, in order to realize a desired oscillation wavelength efficiently by adjusting the oscillation wavelength of the laser with sufficient accuracy even when the oscillation wavelength of a manufactured laser deviates from a design value, for example, due to the manufacturing errors and the like in the manufacturing of the laser, there is provided a semiconductor laser comprising a semiconductor substrate, a semiconductor stacking body including a waveguide formed on the semiconductor substrate, and a diffraction grating, wherein the diffraction grating is formed along the waveguide so as to appear in the surface of the semiconductor stacking body.
申请公布号 US7852890(B2) 申请公布日期 2010.12.14
申请号 US20050113054 申请日期 2005.04.25
申请人 FUJITSU LIMITED 发明人 MATSUDA MANABU;YAMAMOTO TSUYOSHI
分类号 H01S3/04;H01S5/00 主分类号 H01S3/04
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