发明名称 |
Step gate electrode structures for field-effect transistors and methods for fabricating the same |
摘要 |
A method is disclosed for forming at least two semiconductor devices with different gate electrode thicknesses. After forming a gate dielectric region, and determining whether a first or second device formed on the gate dielectric region expects a relatively faster gate dopant diffusion rate, a gate electrode layer is formed on the gate dielectric region wherein the gate electrode layer has a step-structure in which a portion thereof for the first device has a relatively larger thickness than that for the second device if the first device has a relatively faster gate dopant diffusion rate.
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申请公布号 |
US7851868(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20040851872 |
申请日期 |
2004.05.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIAW JHON JHY |
分类号 |
H01L21/70;H01L21/28;H01L21/8234;H01L21/8238;H01L29/04;H01L29/10;H01L29/772;H01L31/036;H01L31/0376;H01L31/20 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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