发明名称 Group III nitride based flip-chip integrated circuit and method for fabricating
摘要 A circuit substrate has one or more active components and a plurality of passive circuit elements on a first surface. An active semiconductor device has a substrate with layers of material and a plurality of terminals. The active semiconductor device is flip-chip mounted on the circuit substrate and at least one of the terminals of the device is electrically connected to an active component on the circuit substrate. The active components on the substrate and the flip-chip mounted active semiconductor device, in combination with passive circuit elements, form preamplifiers and an output amplifier respectively. In a power switching configuration, the circuit substrate has logic control circuits on a first surface. A semiconductor transistor flip-chip mounted on the circuit substrate is electrically connected to the control circuits on the first surface to thereby control the on and off switching of the flip-chip mounted device.
申请公布号 US7851909(B2) 申请公布日期 2010.12.14
申请号 US20040977165 申请日期 2004.10.29
申请人 CREE, INC. 发明人 MISHRA UMESH;PARIKH PRIMIT;WU YIFENG
分类号 H01L23/34;H01L21/8252;H01L23/14;H01L23/367;H01L23/48;H01L23/66;H01L27/06;H01L29/20;H01L29/778 主分类号 H01L23/34
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