发明名称 Pattern forming method and manufacturing method of semiconductor device
摘要 A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
申请公布号 US7851363(B2) 申请公布日期 2010.12.14
申请号 US20050034975 申请日期 2005.01.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKEISHI TOMOYUKI;KATO HIROKAZU;ITO SHINICHI
分类号 G03F7/26;H01L21/311;G03F7/11;G03F7/16;G03F7/38;H01L21/027;H01L21/033;H01L21/306;H01L21/314 主分类号 G03F7/26
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