| 摘要 |
To provide an organic transistor which can achieve a reduced leak current from a gate electrode. An organic transistor including a substrate 1, a pair of a source electrode 4 and a drain electrode 5, an organic semiconductor layer 6 provided between the source electrode 4 and the drain electrode 5, and a gate electrode 2 provided in association with the organic semiconductor 6 with a gate insulating layer 3 interposed therebetween, wherein the gate insulating layer 3 has a stacked structure including at least an organic insulating layer 3a and an inorganic barrier layer 3b.
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