| 摘要 |
A transistor includes a nitride semiconductor layer and a gate electrode layer. The gate electrode layer includes a tantalum nitride layer on the nitride semiconductor layer. The tantalum nitride layer forms a Schottky junction with the nitride semiconductor layer. The transistor also includes an insulating film on the nitride semiconductor layer. The insulating film surrounds the gate electrode layer. A first portion of the gate electrode layer, in contact with the nitride semiconductor layer, has a higher nitrogen mole fraction than a second portion of the gate electrode layer.
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