| 发明名称 |
Method of forming metal-insulator-metal structure |
| 摘要 |
A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.
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| 申请公布号 |
US7851324(B2) |
申请公布日期 |
2010.12.14 |
| 申请号 |
US20060586528 |
申请日期 |
2006.10.26 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG YU-JEN;TSAI CHIA-SHIUNG;TU YEUR-LUEN;CHAO LAN-LIN;WU CHIH-TA;LIN HSING-LIEN;WANG CHUNG CHIEN |
| 分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
| 代理机构 |
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