发明名称 |
MOSFET device including a source with alternating P-type and N-type regions |
摘要 |
Apparatus and methods are provided for fabricating semiconductor devices with reduced bipolar effects. One apparatus includes a semiconductor body (120) including a surface and a transistor source (300) located in the semiconductor body proximate the surface, and the transistor source includes an area (310) of alternating conductivity regions (3110, 3120). Another apparatus includes a semiconductor body (120) including a first conductivity and a transistor source (500) located in the semiconductor body. The transistor source includes multiple regions (5120) including a second conductivity, wherein the regions and the semiconductor body form an area (510) of alternating regions of the first and second conductivities. One method includes implanting a semiconductor well (120) including a first conductivity in a substrate (110) and implanting a plurality of doped regions (5120) comprising a second conductivity in the semiconductor well. An area (510) comprising regions of alternating conductivities is then formed in the semiconductor well.
|
申请公布号 |
US7851889(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20070742363 |
申请日期 |
2007.04.30 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ZHU RONGHUA;BOSE AMITAVA;KHEMKA VISHNU K.;ROGGENBAUER TODD C. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|