发明名称 Semiconductor memory device with ZQ calibration
摘要 A semiconductor memory device is capable of outputting calibration codes to an external circuit. The semiconductor memory device includes a data output control unit for controlling an output of data, a calibration code output control unit for transmitting calibration codes to determine a termination resistance value, a test mode signal generating unit for generating a test mode signal which is enabled in the test mode for outputting the calibration codes, and a test mode control unit for selectively outputting the data or the calibration codes in response to the test mode signal.
申请公布号 US7853842(B2) 申请公布日期 2010.12.14
申请号 US20070967528 申请日期 2007.12.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM KI-HO;JANG JI-EUN
分类号 G11C29/00 主分类号 G11C29/00
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