发明名称 Write-assist SRAM cell
摘要 An integrated circuit structure includes a word-line; a column select line; and a latch. The latch includes a first storage node and a second storage node complementary to each other; and an operation voltage node. A control circuit is coupled between the operation voltage node and the latch. The control circuit includes a first input coupled to the word-line; and a second input coupled to the column selection line. The control circuit is configured to interconnect the operation voltage node and the latch when both the word-line and the column select line are selected, and disconnect the operation voltage node and the latch when at least one of the word-line and the column select line is not selected.
申请公布号 US7852661(B2) 申请公布日期 2010.12.14
申请号 US20080345263 申请日期 2008.12.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIU JACK
分类号 G11C11/00 主分类号 G11C11/00
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