| 摘要 |
The Nanotube Array Ballistic Transistors are disclosed, wherein the ballistic (without collisions) electron propagation along the nanotubes, grown normally to the substrate plane on the common metal electrode, is used for a new class of hybrid (solid state/vacuum) electronic devices. In the disclosed transistors, the array of nanotubes emits electrons into vacuum when electrons gain sufficient energy inside the nanotubes due to ballistic electron movement under the voltage applied to the nanotube ends. In the disclosed devices, planar layer deposition technology is used to form multilayer structures and attach two electrodes to the nanotubes ends. The ballistic transistor can also be used for making a new type of electron-emission display when a phosphor layer is deposited on the anode electrode. The non-ballistic nanotube array transistor, employing field-induced electron emission and the same planar layer deposition technique, is also disclosed, the device being considered to be a transistor approaching terahertz frequency range of operation.
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