IC package structures for high power dissipation and low RDSon

摘要

IC package structures for high power dissipation and low RDSon. The package can be considered an inverted QFN package typically manufactured from a double etched lead frame that is then formed (stamped) to receive the electronic devices for connection and wire bonding to the lead frame leads, followed by potting and dicing. Using a split paddle allows the packaging of multiple, electrically isolated power devices. The package is particularly advantageous for packaging vertical power MOSFET devices. Various embodiments are disclosed.